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| LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N5679 2N5680 PNP SILICON TRANSISTORS 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) ! 2 .5 4 (0 .1 0 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 45 DESCRIPTION The 2N5679 and 2N5680 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit The complementary NPN types are the 2N5681 and 2N5682 respectively TO-39 Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25c unless otherwise stated VCBO VCEO VEBO IC IB Ptot Tstg Tj Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tcase 25C Tamb 25C Operating and Storage Temperature Range Junction temperature 2N5679 -100V -100V -4V -1A -0.5A 10W 1W 2N5680 -120V -120V -65 to +200C 200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/00 LAB THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175 SEME 2N5679 2N5680 C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter ICBO Collector Cut Off Current Test Conditions IE = 0 for 2N5679 for 2N5680 VBE = 1.5 for 2N5679 for 2N5680 VCE = -100V VCE = -120V VCB = -100V VCB = -120V Min. Typ. Max. -1 -1 -1 -1 -1 -1 -10 -10 -1 Unit A ICEV Collector Cut Off Current A Tcase = 150C for 2N5679 VCE = -100V for 2N5680 IB = 0 ICEO IEBO Collector Cut Off Current Emitter Cut Off Current for 2N5679 for 2N5680 IC = 0 IB = 0 VCEO(sus)* Collector Emitter Sustaining Voltage for 2N5679 for 2N5680 IC = -250mA VCE(sat)* VBE* hFE* fT CCBO hfe Collector Emitter Saturation Voltage Base Emitter Voltage DC Current Gain Transistion Frequency Collector Base Capacitance Small Signal Current Gain IC = -500mA IC = -1A IC = -250mA IC = -250mA IC = -1A IC = -100mA f = 10MHz IE = 0 f = 1MHz IC = -0.2A f = 1KHz VCE = -1.5V 40 VCB = -20V IB = -25mA IB = -50mA IB = -200mA VCE = -2V VCE = -2V VCE = -2V VCE = -10V 40 5 30 VCE = -70V VCE = -80V VEB = -4V IC = -10mA -100 -120 VCE = -120V mA A -0.6 -1 -2 -1 150 V MHz 50 pF * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/00 This datasheet has been download from: www..com Datasheets for electronics components. |
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